전자 부품 : W4TRD8R-0D00

제조 업체 : Cree

포장 :

핀을 :

설명 : Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

온도 : 분 °C | 맥스 °C

Datasheet : W4TRD8R-0D00 PDF

• W4TRD8R-0D00