전자 부품 : W4NXE8C-LD00

제조 업체 : Cree

포장 :

핀을 :

설명 : Diameter 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

온도 : 분 °C | 맥스 °C

Datasheet : W4NXE8C-LD00 PDF

• W4NXE8C-0D00
• W4NXE8C-LD00
• W4NXE8C-SD00