전자 부품 : W4NXD8C-0000

제조 업체 : Cree

포장 :

핀을 :

설명 : Diameter 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

온도 : 분 °C | 맥스 °C

Datasheet : W4NXD8C-0000 PDF

• W4NXD8C-0000
• W4NXD8C-L000
• W4NXD8C-S000